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Superior sealing. GaN nanowires on a silicon platform eye novel optoelectronics. Propelling PCSEL emission to the mid-infrared. Monolithically integrated QCLs on silicon. Quantum-dot lasers on silicon. Revolutionising RF oscillators with GaN. Ready or not, AI is here to stay. Bipolar p-FETs enable all-GaN power integration.
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WIN Semiconductors Unveils the World's First, 6-inch, 0.15 micron …
WIN Semiconductors Corp. (WIN) has successfully completed processing of the world s first, 6-inch, 0.15 micron, GaAs pHEMT MMIC wafer. The fT (current gain cut-off frequency) and fmax (maximun oscillation cut-off frequency) of these pHEMTs are 85GHZ and 220GHZ, respectively. The details of this outstanding achievement will be presented at the ...
5G: Good for GaAs - News - Compound Semiconductor
Mar 2, 2023 · The French analyst is forecasting that sales for the RF front-end – the unit in the handset that combines GaAs power amplifiers with RF filters, switches and low-noise amplifiers made from other technologies – will climb to $26.9 billion in 2028. That’s a compound annual growth rate of 5.8 percent over the 2022 to 2028 timeframe.
Enkris demonstrates 300mm GaN-on-Si HEMT wafers
Sep 23, 2021 · The 300mm GaN-on-Si HEMT epitaxial layer structure adopted to solve the key issues of wafer cracking/bow and high crystalline defects is shown above in figure 2 (a). The growth starts with an AlN nucleation layer, followed by a strain relief stack, GaN channel, AlGaN barrier and GaN cap. The narrow XRD AlN (002) peak and a good uniformity of ...
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MBE: A game changer for GaN-on-silicon RF - News - Compound …
Jun 21, 2023 · At EasyGaN, a French start-up founded in 2017 by researchers of CRHEA, a CNRS laboratory that pioneered the field of GaN hetero-epitaxy on the silicon substrate, we are helping to accelerate this switch to GaN-on-silicon. Read on to discover how we are using MBE to transform the capability of this class of GaN HEMT in the millimetre-wave domain.
Creating commercially viable diamond substrates - News
Feb 3, 2023 · Diamond is set to serve in many more high-end applications, thanks to the development of a heteroepitaxial growth process for fabricating 2-inch substrates. Crystalline diamond is the ultimate semiconductor. It combines an outstanding degree of crystallinity with an extremely high breakdown voltage, excellent electrical properties and ...
Hybrid bonding: Going for GOLD - News - Compound …
Friday 3rd December 2021. Hybrid bonding provides attainable scaling for packaging of compound semiconductor devices in copper or gold. BY JOHN GHEKIERE FROM CLASSONE TECHNOLOGY. Fabricating semiconductor devices begins by growing epiwafers, with efforts directed at ensuring high-quality crystalline material with minimal imperfections.
News - Compound Semiconductor
3 days ago · You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.