Semiconductor Engineering

Channel-Last GAA NS Oxide FET (Stanford, TSMC, ETH Zurich et al.)

A new technical paper titled “Channel-last gate-all-around nanosheet oxide semiconductor transistors” was published by ...

Forget Transistors: This New “Intelligent” Material Computes Like a Human Brain

Tiny molecules that can think, remember, and learn may be the missing link between electronics and the brain. For more than ...

TSMC's 2nm N2 process officially enters volume production

What just happened? TSMC has begun volume production of chips based on its N2 process technology, marking a major new step in 2nm-class node manufacturing. The company disclosed the milestone on its ...
IEEE

CMOS-Compatible Artificial Optoelectronic Synapse for Neuromorphic Computing

Abstract: A novel CMOS-compatible artificial optoelectronic synapse with combing a photodiode-body-biased MOSFET (PD-MOS) with a floating-gate Transistor (FGT) is proposed. The PD-FGT exhibits a broad ...
IEEE

On-Chip Integration of ZnO Nanowires on Foundry Produced CMOS for Force Sensing

Abstract: This work introduces a novel force sensor incorporating zinc oxide nanowires (ZnO NWs) synthesized via low temperature hydrothermal methods and integrated with foundry-produced CMOS at ...