Abstract: This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-compatible oxide-semiconductor-based ferroelectric field-effect transistors (FeFETs). The proposed model ...
Abstract: Dispersive effects such as trapping play a vital role in determining the performance of AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power ...
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