Abstract: This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ...
Abstract: SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is ...
These new Schottky diodes enable high-efficiency power conversion in energy-intensive AI server farms. Nexperia has introduced two new 1200 V, 20 A silicon carbide (SiC) Schottky diodes—PSC20120J and ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
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Glass Engraving with Diode Laser — Tutorial!
Learn how to create stunning glass engravings using a diode laser with this step-by-step tutorial. Perfect for adding personalized designs to glassware with precision and ease! #GlassEngraving ...
Researchers have discovered the mechanism for supercurrent rectification, in which current flows primarily in one direction in a superconductor. By using a specific iron-based superconductor, they ...
Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. These new devices consist of 40-A to 240-A dual ...
A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
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